1 aos semiconductor product reliability report AOTF7N60FD , rev a plastic encapsulated device alpha & omega semiconductor, inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AOTF7N60FD . accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. review of final electrical test result confi rms that AOTF7N60FD passes aos quality and reliability requirements. the released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. table of contents: i. product descripti on ii. package and die information iii. environmental stress test summary and result iv. reliability evaluation i. product description: the AOTF7N60FD has been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac - dc applications. by providing low r ds(on) , ciss and crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. details refer to the datashee t. ii. die / package information: AOTF7N60FD process standard sub - micron 6 0 0v , 7 a n - channel mosfet with fast recovery diode package type to2 20 f lead frame bare cu die attach soft solder bond ing al wire mold material epoxy resin with silica filler moisture level up to level 1 * note * based on info provided by assembler and mold compound supplier
3 iii. result of reliability stress for AOTF7N60FD note a: the reliability data presents total of available generic data up to the published date. iv. reliability evaluation fit rate (per billion): 4.73 mt t f = 2 3972 years the presentation of fit rate for the individual product reliability is restricted by the actual burn - in sample size of the selected product ( AOTF7N60FD ). failure rate determination is based on jedec standard jesd 85. fit means one failure per billion hours. failure rate = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 1.83 x 10 9 / [ 2 x ( 4 x77x 168 +6 x77x500 +6x77x 1000 ) x 258 ] = 4.73 mt t f = 10 9 / fit = 2.10 x 10 8 hrs = 2 3972 years chi2 = chi squared distribution, determined by the number of failures and confidence interval n = total number of units from htrb and htgb tests h = duration of htrb/htgb testing af = acceleration factor from test to use conditions (ea = 0.7ev and tuse = 55 c ) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s )] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 130 deg c 150 deg c af 258 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltz m anns constant, 8.6 17164 x 10 - 5 e v / k test item test condition time point lot attribution total sample size number of failures reference standard msl precondition 168hr 85 c /85%rh +3 cycle reflow@2 6 0 c - 12 lots 2112 pcs 0 jesd22 - a113 htgb temp = 150 c , vgs=100% of vgsmax 168 hrs 500 hrs 1000 hrs 2 lots 3 lots 3 lot s (note a *) 539 pcs 77 pcs / lot 0 jesd22 - a108 htrb temp = 150 c , vds=80% of vdsmax 168 hrs 500 hrs 1000 hrs 2 lots 3 lots 3 lot s (note a *) 539 pcs 77 pcs / lot 0 jesd22 - a108 hast 130 , 85% rh , 33.3 psi, vgs = 10 0% of vgs max 96 hrs 9 lots (note a *) 495 pcs 55 pcs / lot 0 jesd22 - a1 10 pressure pot 121 c , 29.7psi , rh=100% 96 hrs 9 lots (note a *) 693 pcs 77 pcs / lot 0 jesd22 - a102 temperature cycle - 65 c to 150 c , air to air, 250 / 500 cycles 12 lots (note a *) 924 pcs 77 pcs / lot 0 jesd22 - a104
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